page . 1 july 29,2011-rev.00 pj2301 features ? r ds(on) , v gs @-1.8v,i d @-1.5a=200m ? r ds(on) , v gs @-4.5v,i d @-2.2a=105m ? advanced trench process technology ? high density cell design for ultra low on-resistance ? specially designed for dc/dc converters ? low gate charge ? in compliance with eu rohs 2002/95/ec directives mechanical data ? case: sot-23 package ? terminals : solderable per mil-std-750,method 2026 ? marking : 01 20v p-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) notes: 1. mounted on minimum pad layout. 2. mounted on 50cm 2 copper pad area. parameter symbol limit units drain-source voltage v ds -20 v gate-source voltage v gs + 8v continuous drain current (notes 1) steady-state steady-state t < 5s t a =25 o c t a =70 o c t a =25 o c i d -1.75 -1.4 -2 a pulsed drain current (notes 1) i dm 10 a power dissipation (notes 2) t a =25 o c t a =70 o c p d 700 450 mw typical thermal resistance (notes 1) r ja 175 o c/w typical thermal resistance (notes 1) r jl 65 o c/w operating junction and storage temperature range t j ,t stg -55 to + 150 o c 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.004(0.10)max. 0.020(0.50) 0.013(0.35) 0.044(1.10) 0.035(0.90) 0.006(0.15)min. 0.008(0.20) 0.003(0.08)
page . 2 july 29,2011-rev.00 pj2301 electrical characteristics parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v, i d = -250 a-20--v gate threshold voltage v gs(th) v ds =v gs , i d = -250 a -0.5 -0.7 -0.9 v drain-source on-state resistance r ds(on) v gs = -4.5v, i d = -2.2a - 90 105 m drain-source on-state resistance r ds(on) v gs = -2.5v, i d = -1.7a - 120 140 drain-source on-state resistance r ds(on) v gs = -1.8v, i d = -1.5a - 170 200 zero gate voltage drain current i dss v ds = -16v, v gs =0v - - -1 a gate body leakage i gss v gs = + 8v, v ds =0v - - + 100 na dynamic forward transconductance g fs v ds = -10v, i d = -1.7a 4 6 - s total gate charge q g v ds = -10v, i d = -2.2a v gs = -4.5v -4- nc gate-source charge q gs -0.5- gate-drain charge q gd -1- tur n-on ti me t on v dd = -16v , i d = -2.2a, v gs = -4.5v r gen =2.5 -8- ns tur n-off ti m e t off -35- tur n-on ri s e ti m e t r -15- tur n-off f a ll ti m e t f -25- input capacitance c iss v ds = -10v, v gs =0v f=1.0mh z - 200 300 pf output capacitance c oss -90140 reverse transfer capacitance c rss -4060 gate resistance r g v ds =0v, v gs =0v f=1.0mh z -12- source-drain diode max. diode forward current i s ----2a diode forward voltage v sd i s = -1a, v gs =0v - -0.79 -1 v body-diode reverse recovery ti me t rr i s = -2.1a, di/dt=100a/ s -30-ns body-diode reverse recovery charge q rr -12-nc
page . 3 july 29,2011-rev.00 pj2301 characteristic curves 90 100 110 120 130 25 50 75 100 125 150 t j , junction temperature ( ) i d =-2.1a vgs=-4.5v r ds (on), drain-to-source resistance (m ? ) 0 1 2 3 4 5 6 7 012345 -v ds -drain-to-source voltage (v) -1.2v -1.4v -1.6v -1.8v -i d - drain current(a) -3.0v -2.4v -2.2v -2.0v t j =25 fig.3 transfer characteristics fig.2 on-region characteristics 0.05 0.075 0.1 0.125 0.15 0.175 0.2 0.5 1.5 2.5 3.5 -i d , drain current (a) t j = 25c r ds (on), drain-to-source resistance ( ? ) v gs = -2.5v v gs = -4.5v fig.4 on-resistance vs. drain current and gate voltage fig.5 on-resistance vs. gate-source voltage fig.1 capacitance variation 0 1 2 3 4 5 0 0.5 1 1.5 2 -v gs -gate-to-source voltage (v) t j =25 -i d - drain current(a) v ds > -10v 0 0.1 0.2 0.3 0.4 0.5 12345678 -v gs , gate-to-source voltage (v) i d = -2.1a t j = 25c r ds (on), drain-to-source resistance ( ? ) fig.6 on-resistance variation with temperature v ds = 0 v v gs = 0 v 5 10 10 300 150 100 50 0 20 gate?to?source or drain?to?source voltage (v) c, capacitance (pf) t j = 25 c c oss c iss c rss 250 50 200 ?v gs ?v ds 15
page . 4 july 29,2011-rev.00 pj2301 characteristic curves fig.7 gate-to-source and drain-to-source vs. total charge fig.8 diode forward voltage vs. current fig.9 resistive switching time variation vs. gate resistance fig.10 drain-to-source leakage current vs. voltage fig.11 thermal response 10 100 1000 10000 2468101214161820 -v ds , drain-to-source voltage (v) -i dss , leakage (na) t j = 75c t j = 100c t j = 150c 0 1 2 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -v sd , source-to-drain voltage (v) -i s ,source current (a) v gs = 0v t j = 25c r g , gate resistance ( ) t, time (ns) 1 10 100 1000 1 10 100 t d(off) t d(on) t f t r v dd = ?16 v i d = ?2.1 a v gs = ?4.5 v q g , total gate charge (nc) 3 6 9 12 15 0 ?v gs d = ?2.1 a j = 25 c 0 1 2 3 4 5 0123 0 1 2 3 4 5 gs, ?v gate?to?source voltage (v) ?v ds, drain?to?source voltage (v) q gd q gs ?v ds q t 4 i d = ?2.1 a t j = 25 c normalized thermal transient impedance, junction-to-ambient normalized effective transient thermal impedance 2 1 0.1 0.01 10 C4 10 C3 10 C2 10 C1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r = 62.5 c/w 3. t j C t a = p dm z (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 jl jl
page . 5 mounting pad layout ? packing information t/r - 12k per 13" plastic reel t/r - 3k per 7 plastic reel order information legal statement copyright panjit international, inc 2011 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. pj2301 july 29,2011-rev.00
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